(China (Mainland))
Product Summary
The TPCP8203 is a Field Effect Transistor. It is suitable for Portable Equipment Applications, Motor Drive Applications and DC/DC Converters.
Parametrics
TPCP8203 absolute maximum ratings: (1)Drain-source voltage, VDSS: 40 V; (2)Drain-gate voltage (RGS = 20 kΩ), VDGR: 40 V; (3)Gate-source voltage, VGSS: ±20 V; (4)Drain current, IDP: 18.8 A; (5)drain power dissipation, PD: 1.23 W; (6)Single-pulse avalanche energy, EAS: 10.6 mJ; (7)Avalanche current, IAR: 4.7 A; (8)Repetitive avalanche energy Single-device value at dual operation, EAR: 0.12 mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
TPCP8203 features: (1)Lead (Pb)-free; (2)Small footprint due to small and thin package; (3)Low drain-source ON-resistance: RDS(ON) = 31 mΩ (typ.); (4)High forward transfer admittance: |Yfs| = 8.6 S (typ.); (5)Low leakage current: IDSS = 10 μA (max)(VDS = 40 V); (6)Enhancement model: Vth = 1.3 to 2.5V (VDS = 10 V, ID = 1 mA).
Diagrams
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 TPCP8203(TE85L,F) |
Toshiba |
MOSFET MOSFET N-Ch Dual 40V 4.7A |
Data Sheet |
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TPCP8203(TE85L,F,M |
Toshiba |
MOSFET MOSFET 40V 4.7A |
Data Sheet |
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