(China (Mainland))
Product Summary
The SST39SF010A-70-4I-WHE-9 is a CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF010A-70-4I-WHE-9 writes (Program or Erase) with a 4.5-5.5V power supply. The SST39SF010A-70-4I-WHE-9 conforms to JEDEC standard pinouts for x8 memories.
Parametrics
SST39SF010A-70-4I-WHE-9 absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)D. C. Voltage on Any Pin to Ground Potentia: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Lead Soldering Temperature (3 Seconds): 240℃; (9)Output Short Circuit Current: 100 mA.
Features
SST39SF010A-70-4I-WHE-9 features: (1)Organized as 128K ×8 / 256K ×8 / 512K ×8; (2)Single 4.5-5.5V Read and Write Operations; (3)Superior Reliability; (4)Low Power Consumption (typical values at 14 MHz); (5)Sector-Erase Capability; (6)Latched Address and Data; (7)Fast Erase and Byte-Program; (8)Automatic Write Timing; (9)End-of-Write Detection; (10)TTL I/O Compatibility; (11)JEDEC Standard.
Diagrams
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 SST308 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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